US Patent Issued to INFINEON TECHNOLOGIES on April 15 for "RC snubber with poly silicon resistor and capacitor formed from junction termination edge" (German Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,231, issued on April 15, was assigned to INFINEON TECHNOLOGIES AG (Neubiberg, Germany).

"RC snubber with poly silicon resistor and capacitor formed from junction termination edge" was invented by Dethard Peters (Hoechstadt, Germany) and Guang Zeng (Haar, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes a junction termination edge, a unipolar power transistor, and an RC snubber. The RC snubber has a capacitor between a poly silicon structure and a semiconductor substrate, and part of the junction termination edge. The capacitor has a p-n junction. The RC snubber has a poly silicon resistor between a source of the unipolar p...