ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,688, issued on July 1, was assigned to Infineon Technologies Dresden GmbH & Co. KG (Dresden, Germany).

"Lateral transistor with self-aligned body implant" was invented by Achim Gratz (Dresden, Germany), Jurgen Faul (Radebeul, Germany) and Swapnil Pandey (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A lateral high-voltage transistor includes a semiconductor substrate, a body region formed by dopant implantation in the semiconductor substrate, the body region having a lateral boundary, a dielectric layer arranged over the semiconductor substrate, and a structured gate layer arranged over the dielectric layer. The structured gate laye...