ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,819, issued on April 29, was assigned to Infineon Technologies Dresden GmbH & Co. KG (Dresden, Germany).
"Fill pattern for power transistor and diode devices" was invented by Rolf Weis (Dresden, Germany), Ahmed Mahmoud (Freising, Germany) and Marco Mueller (Pirna, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to an embodiment of a semiconductor device, the device includes: a transistor or diode device formed in a semiconductor substrate; an insulating material at least partially covering a lateral drift zone of the transistor or diode device or a termination region; and a fill pattern disposed over the lateral drift zone or termina...