US Patent Issued to Infineon Technologies Canada on Jan. 20 for "Desaturation protection of power field-effect transistor" (Texas Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,555, issued on Jan. 20, was assigned to Infineon Technologies Canada Inc. (Ottawa).

"Desaturation protection of power field-effect transistor" was invented by Nan Xing (Allen, Texas), Yinglai Xia (Plano, Texas), Yalong Li (Allen, Texas) and Zhemin Zhang (Allen, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Desaturation protection for a power field-effect transistor. The desaturation protection circuit includes the power field-effect transistor and a sense field-effect transistor that each have threshold voltages that are approximately the same. The sense field-effect transistor shares a gate terminal with the power field-effect transistor and...