US Patent Issued to Infineon Technologies Canada on Dec. 9 for "Bidirectional current sense for power field-effect transistor" (American, Indian Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,493,061, issued on Dec. 9, was assigned to Infineon Technologies Canada Inc. (Ottawa).

"Bidirectional current sense for power field-effect transistor" was invented by Ramesh G. Karpur (Bangalore, India), Abhisek Jain (Delhi, India), Lucas Andrew Milner (Sunnyvale, Calif.), Nan Xing (Allen, Texas), Ashutosh Ravindra Joharapurkar (Bangalore, India), Zhemin Zhang (Allen, Texas) and Krishnaswamy Nagaraj (Ashburn, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bidirectional current sense circuit allowing for sensing of power current passing through a power field-effect transistor, regardless of the direction of the power current. The bidirectional curre...