US Patent Issued to Infineon Technologies Canada on Aug. 12 for "Current sensing by using aging sense transistor" (Canadian, American Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,385,953, issued on Aug. 12, was assigned to Infineon Technologies Canada Inc. (Ottawa).

"Current sensing by using aging sense transistor" was invented by Lucas Andrew Milner (Sunnyvale, Calif.), Marco A. Zuniga (Berkeley, Calif.), Nan Xing (Allen, Texas), Robert Wayne Mounger (Dallas), Edward Macrobbie (Nepean, Canada), Sridhar Ramaswamy (Allen, Texas), Ahmad Mizannojehdehi (Stittsville, Canada) and Thomas William Macelwee (Nepean, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "A current sense circuit that allows for accurate sensing of a power current that flows through a power transistor as the power transistor ages. The circuit includes the po...