US Patent Issued to Infineon Technologies Bipolar on June 24 for "Method and device for producing an edge structure of a semiconductor component" (German Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,581, issued on June 24, was assigned to Infineon Technologies Bipolar GmbH & Co. KG (Warstein, Germany).

"Method and device for producing an edge structure of a semiconductor component" was invented by Tobias Gamon (Warstein, Germany), Reiner Barthelmess (Soest, Germany), Uwe Kellner-Werdehausen (Leutenbach, Germany) and Sebastian Sommer (Castrop-Rauxel, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing an edge structure of a semiconductor component includes: providing a semiconductor body having at least two mutually spaced-apart main faces respectively having an edge, between which edges an edge face extends; and etchin...