US Patent Issued to Infineon Technologies Austria on Sept. 9 for "Semiconductor die including an edge termination structure laterally between an active area and a lateral edge region of the die" (Austrian, German Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,349, issued on Sept. 9, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor die including an edge termination structure laterally between an active area and a lateral edge region of the die" was invented by Adrian Finney (Villach, Austria), Oliver Blank (Villach, Austria), Alessandro Ferrara (Villach, Austria) and Stefan Tegen (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "The application relates to a semiconductor die including a device in an active area of the die. The device includes a field electrode region formed in a field electrode trench extending vertically into a semiconductor body. The fi...