US Patent Issued to Infineon Technologies Austria on Sept. 30 for "Semiconductor die with a vertical transistor device" (Austrian Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,013, issued on Sept. 30, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor die with a vertical transistor device" was invented by Thomas Feil (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to a semiconductor die, including a vertical power transistor device, a pull-down transistor device, and a capacitor. The pull-down transistor device is connected between a gate electrode of the vertical power transistor device and a ground terminal and connects the gate electrode to the ground terminal in a conducting state. The capacitor is connected between one of the load terminals of ...