US Patent Issued to Infineon Technologies Austria on Sept. 30 for "Semiconductor device including substrate layer with floating base region and gate driver circuit" (German Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,988, issued on Sept. 30, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor device including substrate layer with floating base region and gate driver circuit" was invented by Christian Schippel (Dresden, Germany), Dirk Priefert (Moers, Germany), Felix Simon Winterer (Munich) and Remigiusz Viktor Boguszewicz (Essen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate layer having a floating base region of a first conductivity type. A first well of a second conductivity type and the floating base region form a first pn junction. A first conductive structure is electrical...