ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,636, issued on Oct. 7, was assigned to Infineon Technologies Austria AG (Villach, Austria).
"Transistor device" was invented by Stefan Tegen (Dresden, Germany), Alessandro Ferrara (Landskron, Austria), Franz Hirler (Isen, Germany), Andrei Josiek (Dresden, Germany) and Matthias Kroenke (Dresden, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device includes a semiconductor substrate having a first major surface, a cell field, and an edge termination region laterally surrounding the cell field. The cell field includes elongate trenches that extend from the first major surface into the semiconductor substrate and that are positioned...