US Patent Issued to Infineon Technologies Austria on Oct. 7 for "Semiconductor power device and method of manufacturing the same" (Austrian Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,674, issued on Oct. 7, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor power device and method of manufacturing the same" was invented by Jyotshna Bhandari (Villach, Austria), Gerald Patterer (Kirchbach, Austria), Maximilian Roesch (St. Magdalen, Austria), Werner Schustereder (Villach, Austria) and Stanislav Vitanov (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "The application relates to a semiconductor power device including a semiconductor body in which a transistor device is formed, the transistor device having a gate region and a channel region laterally aside the gate region, the gate region...