US Patent Issued to Infineon Technologies Austria on Oct. 21 for "Transistor device and method for producing a transistor device" (California Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,139, issued on Oct. 21, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Transistor device and method for producing a transistor device" was invented by Weichun Huang (Torrance, Calif.), Timothy Henson (Mount Shasta, Calif.) and Ling Ma (Redondo Beach, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device includes: a semiconductor body having opposing first and second surfaces; an edge termination region laterally surrounding an active area; a drain region of a first conductivity type at the second surface; and a drift region of the first conductivity type on the drain region. In the active area, a body regio...