ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,305, issued on Nov. 11, was assigned to Infineon Technologies Austria AG (Villach, Austria).
"Water and ion barrier for III-V semiconductor devices" was invented by Gerhard Prechtl (Rosegg, Austria) and Oliver Haeberlen (St. Magdalen, Austria).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a device formed in a III-V semiconductor body; metal layer(s) above the III-V semiconductor body; an interlayer dielectric adjacent each metal layer; vias electrically connecting each metal layer to the device formed in the III-V semiconductor body; a passivation layer touching and being supported by a top surface of the III-V semic...