US Patent Issued to Infineon Technologies Austria on Nov. 11 for "Semiconductor-on-insulator device with lightly doped extension region" (German Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,308, issued on Nov. 11, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor-on-insulator device with lightly doped extension region" was invented by Ralf Rudolf (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an insulator layer and a semiconductor layer formed on the insulator layer. The semiconductor layer includes a first region of a first conductivity type, a second region of a second conductivity type, and a lightly doped extension region of the first conductivity type separating the first region and the second region along a lateral x-axis. A dielectric structure l...