ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,348, issued on Nov. 11, was assigned to Infineon Technologies Austria AG (Villach, Austria).
"Semiconductor device" was invented by Hyeongnam Kim (Chandler, Ariz.), Mohamed Imam (Chandler, Ariz.), Eric G. Persson (Minnetonka, Minn.) and Alain Charles (Redondo Beach, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A Group III nitride transistor cell is provided that includes a Group III nitride-based body, a source finger, a gate finger, and a drain finger extending substantially parallel to one another and positioned on the Group III nitride-based body, the gate finger being arranged laterally between the source finger and the drain finger and...