US Patent Issued to Infineon Technologies Austria on Nov. 11 for "Power semiconductor device having an electrode with an embedded material" (Austrian, German Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,324, issued on Nov. 11, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Power semiconductor device having an electrode with an embedded material" was invented by Stefan Karner (Klagenfurt, Austria), Oliver Blank (Villach, Austria), Gunter Denifl (Annenheim, Austria), Germano Galasso (Unterhaching, Germany), Saurabh Roy (Villach, Austria), Hans-Joachim Schulze (Taufkirchen, Germany) and Michael Stadtmueller (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; a trench formed in a first main surface of the semiconductor ...