US Patent Issued to Infineon Technologies Austria on June 17 for "Semiconductor die having a sodium stopper in an insulation layer groove and method of manufacturing the same" (Austrian Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,255, issued on June 17, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor die having a sodium stopper in an insulation layer groove and method of manufacturing the same" was invented by Oliver Blank (Villach, Austria), Christof Altstatter (Amlach, Austria) and Ingmar Neumann (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "The application relates to a semiconductor die having a semiconductor body including an active region, an insulation layer on the semiconductor body, and a sodium stopper formed in the insulation layer. The sodium stopper is arranged in an insulation layer groove which intersects t...