US Patent Issued to Infineon Technologies Austria on June 10 for "Silicon-on-insulator (SOI) device having variable thickness device layer and corresponding method of production" (Malaysian Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,891, issued on June 10, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Silicon-on-insulator (SOI) device having variable thickness device layer and corresponding method of production" was invented by Manoj Chandrika Reghunathan (Kulim, Malaysia), Devesh Kumar Datta (Butterworth Penang, Malaysia), Eric Alois Graetz (Penang, Malaysia), Muhammad Akmal Hasanudin (Selangor, Malaysia) and Vijay Anand Ramadass (Penang, Malaysia).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of producing power semiconductor devices from a silicon-on-insulator (SOI) wafer is described. The SOI wafer includes a silicon device layer, a bulk sili...