US Patent Issued to Infineon Technologies Austria on July 22 for "Chip-substrate composite semiconductor device" (Austrian Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,052, issued on July 22, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Chip-substrate composite semiconductor device" was invented by Christian Fachmann (Furnitz, Austria), Barbara Angela Glanzer (Klagenfurt, Austria) and Andreas Riegler (Lichtpold, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a plurality of patterns of metal structures in a dielectric inorganic substrate wafer. The metal structures are accommodated in recesses of the dielectric inorganic substrate wafer and at least partly connect through the dielectric inorganic substrate. The method...