US Patent Issued to Infineon Technologies Austria on July 1 for "Semiconductor device including a trench structure having a trench dielectric structure with a gap" (Austrian, German Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,401, issued on July 1, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor device including a trench structure having a trench dielectric structure with a gap" was invented by Hans Weber (Bayern, Germany), David Kammerlander (Villach, Austria) and Andreas Riegler (Lichtpold, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is proposed. An example of the semiconductor device includes a semiconductor body having a first main surface. A trench structure extends into the semiconductor body from the first main surface. The trench structure includes a trench electrode structure and a trench diele...