US Patent Issued to Infineon Technologies Austria on July 1 for "Lateral III/V heterostructure field effect transistor" (Arizona Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,389, issued on July 1, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Lateral III/V heterostructure field effect transistor" was invented by Hyeongnam Kim (Chandler, Ariz.) and Mohamed Imam (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention relates to a lateral field effect transistor, in particular a HEMT having a heterostructure, in a III/V semiconductor system with a p-type semiconductor being arranged between an ohmic load contact, in particular a drain contact, and a gate contact of the transistor for an injection of holes into a portion of the transistor channel. Further, a recombination zone im...