US Patent Issued to Infineon Technologies Austria on July 1 for "Edge termination structure for power transistor devices" (Austrian, American Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,400, issued on July 1, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Edge termination structure for power transistor devices" was invented by Lina Guo (Laguna Niguel, Calif.), Oliver Blank (Villach, Austria), Timothy Henson (Mount Shasta, Calif.) and Laszlo Juhasz (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is described. The semiconductor device includes: a semiconductor substrate having an edge, an active area spaced inward from the edge, and an edge termination area laterally surrounding the active area; and a plurality of transistor cells formed in the active area, each transistor...