US Patent Issued to Infineon Technologies Austria on Jan. 13 for "Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor device" (Austrian, German Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,555, issued on Jan. 13, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor device" was invented by Saurabh Roy (Villach, Austria), Matteo Dainese (Munich), Michael Ehmann (Villach, Austria), Hiroshi Narahashi (Villach, Austria), Johanna Schlaminger (Villach, Austria), Katharina Teichmann (Munich) and Sigrid Wabnig (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a TiW layer arranged on the semiconductor substrate a Ti layer arranged on the TiW layer, a Ni alloy...