ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,075, issued on Jan. 13, was assigned to Infineon Technologies Austria AG (Villach, Austria).
"Insulated gate bipolar transistor" was invented by Matteo Dainese (Munich), Alim Karmous (Dresden, Germany), Christian Philipp Sandow (Haar, Germany), Francisco Javier Santos Rodriguez (Villach, Austria), Daniel Schlogl (Villach, Austria) and Hans-Joachim Schulze (Taufkirchen, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "An insulated gate bipolar transistor (IGBT) is proposed. The IGBT includes a semiconductor body having a first surface and a second surface. The IGBT further includes an active area and an edge termination area that at least partl...