ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,092, issued on Jan. 13, was assigned to Infineon Technologies Austria AG (Villach, Austria).
"High-voltage semiconductor device" was invented by Lars Muller-Meskamp (Dresden, Germany), Ralf Rudolf (Dresden, Germany), Dirk Priefert (Moers, Germany), Annett Winzer (Dresden, Germany), Thomas Kunzig (Baldham, Germany) and Christian Schippel (Dresden, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer with an inner portion, an outer portion laterally surrounding the inner portion, and a transition portion laterally surrounding the inner portion and separating the inner portion and the outer portio...