ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,700, issued on Feb. 18, was assigned to Infineon Technologies Austria AG (Villach, Austria).
"Type III-V semiconductor device with structured passivation" was invented by Simone Lavanga (Villach, Austria), Nicholas Dellas (Villach, Austria), Gerhard Prechtl (Rosegg, Austria) and Luca Sayadi (Villach, Austria).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high-electron-mobility transistor comprises a semiconductor body comprising a barrier region and a channel region that forms a heterojunction with the barrier region such that a two-dimensional charge carrier gas channel is disposed in the channel region, source and drain electrodes disposed on th...