US Patent Issued to Infineon Technologies Austria on Feb. 18 for "Transistor device having a cell field and method of fabricating a gate of the transistor device" (Austrian Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,706, issued on Feb. 18, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Transistor device having a cell field and method of fabricating a gate of the transistor device" was invented by Ingmar Neumann (Villach, Austria), Michael Hutzler (Villach, Austria), David Laforet (Villach, Austria), Roland Moennich (Klagenfurt, Austria) and Thomas Ralf Siemieniec (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a transistor device a semiconductor substrate having a main surface, and a cell field including a plurality of transistor cells of a power transistor. The cell field further includes: a body region...