US Patent Issued to Infineon Technologies Austria on Feb. 17 for "Semiconductor power device and method of manufacturing the same" (Austrian, German Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,333, issued on Feb. 17, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor power device and method of manufacturing the same" was invented by Oliver Blank (Villach, Austria), Adrian Finney (Villach, Austria), Alessandro Ferrara (Landskron, Austria), Franz Hirler (Isen, Germany) and Stefan Tegen (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to a power device, having a channel region, a gate region formed aside the channel region, for controlling a channel formation, a drift region formed vertically below the channel region, a field electrode formed in a field electrode trench ...