ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,316, issued on Feb. 11, was assigned to Infineon Technologies Austria AG (Villach, Austria).
"Semiconductor device including insulated gate bipolar transistor" was invented by Christian Philipp Sandow (Haar, Germany) and Wolfgang Roesner (Ottobrunn, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an IGBT in an IGBT portion of a semiconductor body and a diode in a diode portion of the semiconductor body. The diode includes an anode region of a first conductivity type and confined by diode trenches along a first lateral direction. Each of the diode trenches includes a diode trench electrode and a diode trench die...