US Patent Issued to Infineon Technologies Austria on Feb. 10 for "Transistor device having groups of transistor cells with different body region average doping concentrations and different source region densities" (Austrian Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,423, issued on Feb. 10, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Transistor device having groups of transistor cells with different body region average doping concentrations and different source region densities" was invented by Gerhard Thomas Nobauer (Villach, Austria), Alessandro Ferrara (Villach, Austria) and Beatrix Carla Eleonore Leontine Trapp (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device includes: a plurality of transistor cells in a semiconductor substrate; and a source pad above the semiconductor substrate and electrically connected to a source region and a body region of t...