US Patent Issued to Infineon Technologies Austria on Feb. 10 for "Semiconductor device and method of fabricating a semiconductor device" (California Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,422, issued on Feb. 10, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor device and method of fabricating a semiconductor device" was invented by Harsh Naik (El Segundo, Calif.), Timothy Henson (Mount Shasta, Calif.), Ashita Mirchandani (Rolling Hills Estates, Calif.), Robert Haase (San Pedro, Calif.) and Honghai He (Redondo Beach, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a semiconductor device is provided that includes: a vertical power FET configured to switch a load current and provide a channel of a first conductivity type; and a lateral FET configured to drive the vertical power ...