ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,249, issued on Aug. 19, was assigned to Infineon Technologies Austria AG (Villach, Austria).
"RC IGBT and method of producing an RC IGBT" was invented by Frank Dieter Pfirsch (Munich).
According to the abstract* released by the U.S. Patent & Trademark Office: "An RC IGBT includes an IGBT section and a diode section. At least some of a plurality of diode mesas in the diode section are coupled to the drift region via a second anode region electrically connected to the emitter terminal of the RC IGBT. The second anode region extends deeper along the vertical direction as compared to trenches in the diode section."
The patent was filed on Dec. 21, 2021, under Application No. 17/557,...