US Patent Issued to Infineon Technologies Austria on Aug. 12 for "Semiconductor die with a transistor device and method of manufacturing the same" (Austrian Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,658, issued on Aug. 12, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor die with a transistor device and method of manufacturing the same" was invented by Thomas Feil (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to a semiconductor die with a transistor device, having a source region, a drain region, a body region including a channel region, a gate region, which includes a gate electrode, next to the channel region, for controlling a channel formation, a drift region between the channel region and the drain region, and a field electrode region with a field electrode formed...