US Patent Issued to Infineon Technologies Austria on April 22 for "Semiconductor device having a transistor with trenches and mesas" (German Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,621, issued on April 22, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor device having a transistor with trenches and mesas" was invented by Caspar Leendertz (Munich), Markus Beninger-Bina (Grosshelfendorf, Germany), Matteo Dainese (Munich), Alice Pei-Shan Leendertz (Unterhaching, Germany) and Christian Philipp Sandow (Haar, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a transistor that has: a drift region of a first conductivity type in a semiconductor substrate having a first main surface; a body region of a second conductivity type between the drift region and the first ...