US Patent Issued to Industry-University Cooperation Foundation Hanyang University on Sept. 23 for "Selector device comprising polycrystalline metal oxide layer and cross-point memory comprising same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,521, issued on Sept. 23, was assigned to Industry-University Cooperation Foundation Hanyang University (Seoul, South Korea).

"Selector device comprising polycrystalline metal oxide layer and cross-point memory comprising same" was invented by Jin Pyo Hong (Seoul, South Korea) and Gabriel Jang (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A selection device and a crosspoint memory including the same are provided. The selection device has a lower electrode. A polycrystalline metal oxide layer including insulating crystal grains and a conductive nanochannel formed in a grain boundary between the crystal grains is disposed on the l...