US Patent Issued to INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY on Dec. 30 for "Selective element doped with chalcogen element" (South Korean Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,913, issued on Dec. 30, was assigned to INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY (Seoul, South Korea).

"Selective element doped with chalcogen element" was invented by Jin Pyo Hong (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a selective device having high selectivity and temperature stability. The selective device has a doped insulating layer. The doped insulating layer has a metal oxide and a chalcogen element introduced into the metal oxide. Metal oxide has amorphous structure with minimized defects, and the introduced chalcogen elements form a conductive channel at a specific voltage and re...