US Patent Issued to INDUSTRY-ACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIVERSITY on Sept. 30 for "Optoelectronic synaptic device including quantum dot(QD)-transition metal chalcogenide(TMD) heterojunction" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,428,595, issued on Sept. 30, was assigned to INDUSTRY-ACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIVERSITY (Jinju-si, South Korea).

"Optoelectronic synaptic device including quantum dot(QD)-transition metal chalcogenide(TMD) heterojunction" was invented by Jun Hong Park (Jinju-si, South Korea) and Hyeong Tae Kim (Changwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "As the optoelectronic synaptic device according to a preferred embodiment includes a photoactive layer in which a heterojunction is formed as inorganic quantum dots that accept a near-infrared light signal directly contacts a transition metal dichalcogenide as a ...