US Patent Issued to INDUSTRY-ACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIVERSITY on May 20 for "Method for controlling surface characteristics and thickness of multilayer transition metal dichalcogenide thin film" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,231, issued on May 20, was assigned to INDUSTRY-ACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIVERSITY (Jinju-si, South Korea).

"Method for controlling surface characteristics and thickness of multilayer transition metal dichalcogenide thin film" was invented by Jun Hong Park (Jinju-si, South Korea) and Chang Hwan Oh (Jeollanam-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment relates to a method for controlling the surface characteristics and thickness of a multilayer transition metal dichalcogenide thin film. By forming an amorphous transition metal oxide thin film on a multilayer transition metal dichalcogenide ...