US Patent Issued to INDUSTRY-ACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIVERSITY on Aug. 26 for "Field effect transistor including transition metal dichalcogenide covered with protective layer, and method of manufacturing the same" (South Korean Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,925, issued on Aug. 26, was assigned to INDUSTRY-ACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIVERSITY (Jinju-si, South Korea).

"Field effect transistor including transition metal dichalcogenide covered with protective layer, and method of manufacturing the same" was invented by Jun Hong Park (Jinju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "As a field effect transistor (FET) having a transition metal dichalcogenide capped with a hydrocarbon (HC) protective film according to a preferred embodiment as a channel layer forms a dielectric thin film having a large area of a centimeter scale as a protective film on the surface...