US Patent Issued to Industry-Academic Cooperation Foundation, YONSEI UNIVERSITY on Jan. 27 for "3-dimensional resonant structure based infrared selective emitter capable of broadband increased emission" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,535,629, issued on Jan. 27, was assigned to Industry-Academic Cooperation Foundation, YONSEI UNIVERSITY (Seoul, South Korea).

"3-dimensional resonant structure based infrared selective emitter capable of broadband increased emission" was invented by Hyung Hee Cho (Seoul, South Korea), Nam Kyu Lee (Siheung-si, South Korea), Joon-Soo Lim (Gyeongsan-si, South Korea), In Joong Chang (Seoul, South Korea), Ju Yeong Nam (Seoul, South Korea), Hyung Mo Bae (Seoul, South Korea) and Ji Hyeok Kim (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Proposed is a 3-dimensional resonant structure-based infrared selective emitter capable of maximizing ...