US Patent Issued to Industry-Academic Cooperation Foundation, Kunsan National University on Oct. 28 for "2D material-integrated halide perovskite thin-film semiconductor device and its fabrication method" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,840, issued on Oct. 28, was assigned to Industry-Academic Cooperation Foundation, Kunsan National University (Gunsan-si, South Korea).

"2D material-integrated halide perovskite thin-film semiconductor device and its fabrication method" was invented by Jung Yup Yang (Gunsan-si, South Korea) and Hyojung Kim (Incheon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A halide perovskite thin film semiconductor device according to an embodiment of the present invention includes: a substrate; a halide perovskite layer formed on an upper surface side of the substrate; a two-dimensional material layer formed on the halide perovskite layer; an elec...