US Patent Issued to Industry-Academic Cooperation Foundation, Kunsan National University on Dec. 30 for "Complementary semiconductor devices using halide perovskite thin films" (South Korean Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,936, issued on Dec. 30, was assigned to Industry-Academic Cooperation Foundation, Kunsan National University (Gunsan-si, South Korea).

"Complementary semiconductor devices using halide perovskite thin films" was invented by Jung Yup Yang (Gunsan-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A halide perovskite-based complementary semiconductor device according to an embodiment of the present invention includes a substrate, a two-dimensional material layer formed on an upper surface side of the substrate and including a hole injection layer and an electron injection layer, a halide perovskite layer formed on the two-dimensional mater...