ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,721, issued on Sept. 2, was assigned to Industrial Technology Research Institute (Hsinchu, Taiwan).
"Memory cell" was invented by Chih-Sheng Lin (Tainan, Taiwan), Tuo-Hung Hou (Hsinchu, Taiwan), Fu-Cheng Tsai (Tainan, Taiwan), Jian-Wei Su (Hsinchu, Taiwan) and Kuo-Hua Tseng (Yilan County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a memory cell including a first transistor having a first terminal coupled to a bit line; a second transistor having a first terminal coupled to a bit line bar; a weight storage circuit coupled between a gate terminal of the first transistor and a gate terminal of the second transistor, storing a we...