US Patent Issued to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE on May 13 for "Magnetic random access memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,292, issued on May 13, was assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Hsinchu, Taiwan).

"Magnetic random access memory structure" was invented by Hsin-Han Lee (Hsinchu, Taiwan), Jeng-Hua Wei (Taipei, Taiwan), Shan-Yi Yang (Hsinchu, Taiwan) and Yu-Chen Hsin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic random access memory (MRAM) structure is provided. The MRAM structure includes a first write electrode, a first magnetic tunnel junction (MTJ) stack, a voltage control electrode, a second MTJ stack, and a second write electrode. The first MTJ stack includes a first free layer disposed on the first write electrode,...