US Patent Issued to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE on June 24 for "All-oxide transistor structure, method for fabricating the same and display panel comprising the structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,681, issued on June 24, was assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Hsinchu, Taiwan).

"All-oxide transistor structure, method for fabricating the same and display panel comprising the structure" was invented by Haw-Tyng Huang (Taipei, Taiwan), Po-Chun Yeh (Taichung, Taiwan), Hsien-Yi Liao (Taichung, Taiwan) and Yao-Cing Han (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An all-oxide transistor structure includes a substrate having an upper surface and a first transistor disposed on the upper surface of the substrate. The first transistor includes a first drain, a first dielectric layer, a first source, at least one firs...