ALEXANDRIA, Va., July 23 -- United States Patent no. 12,366,482, issued on July 22, was assigned to Industrial Technology Research Institute (Hsinchu, Taiwan).
"Infrared device and method for manufacturing the same" was invented by Heng-Chung Chang (Taichung, Taiwan), Chih-Ya Tsai (Taichung, Taiwan), Hui-Chi Su (Kaohsiung, Taiwan) and Jing-Yuan Lin (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An infrared device is provided. The infrared device includes a substrate, a metal layer, a first semiconductor layer, an absorber layer, and a second semiconductor layer. The metal layer is disposed on the substrate. The first semiconductor layer is disposed on the substrate and electrically connec...