US Patent Issued to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE on July 1 for "Microelectromechanical infrared sensing device and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,345,571, issued on July 1, was assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Hsinchu, Taiwan).

"Microelectromechanical infrared sensing device and fabrication method thereof" was invented by Chin-Jou Kuo (Tainan, Taiwan), Bor-Shiun Lee (New Taipei, Taiwan) and Ming-Fa Chen (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MEMS infrared sensing device includes a substrate and an infrared sensing component. The infrared sensing component is provided above the substrate. The infrared sensing component includes a sensing plate and at least one supporting element. The sensing plate includes at least one infrared absorbing layer, an inf...