ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,133, issued on Aug. 5, was assigned to Industrial Technology Research Institute (Hsinchu, Taiwan).
"Power semiconductor device" was invented by Tai-Jyun Yu (Taoyuan, Taiwan), Sheng-Tsai Wu (Taoyuan, Taiwan), Kuo-Shu Kao (New Taipei, Taiwan), Han-Lin Wu (Hsinchu, Taiwan), Tai-Kuang Lee (Taoyuan, Taiwan) and Jing-Yao Chang (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device, including a terminal base, is provided. The terminal base has a first end and a second end opposite to each other. The first end has a first flange expanding outward. The first flange is welded to a pad of a substrate by a solder. An incl...