ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,985, issued on Sept. 30, was assigned to IMEC VZW (Leuven, Belgium).
"Strained semiconductor monocrystalline nanostructure" was invented by Geert Eneman (Heverlee, Belgium), Basoene Briggs (Heverlee, Belgium), An De Keersgieter (Oud-Heverlee, Belgium), Anabela Veloso (Leuven, Belgium) and Paola Favia (Overijse, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure comprises a semiconductor substrate having a top layer and one or more semiconductor monocrystalline nanostructures. Each nanostructure has a first and a second extremity defining an axis parallel to the top surface of the semiconductor substrate and separated t...